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Μνήμη RAM Φορητού DDR4 8GB SO 2666 CL19 Transcend JetRam, JM2666HSG-8G
εως 36 δόσεις με πιστωτική κάρτα
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Έως 36 Δόσεις. Δείτε το πλάνο δόσεων:
TBI Bank
Buy Now Pay Later.
4 installments 0% επιτόκιο, 20€ έως 300€
3 to 60 installments 300€ έως 100.00€
- 1. Ship with ACS Courier
- 2. Αποστολές με μεταφορικές εταιρίες για ογκώδη αντικείμενα
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3. Pickup from BoxNow automated machine:
Με την BoxNow μπορείς να παραλάβεις το δέμα σου από Αυτόματο Μηχάνημα Παραλαβής που βρίσκεται κοντά σου, όλες τις ώρες της ημέρας 24/7. Η υπηρεσία έχει χρέωση 3€. Υπάρχει δυνατότητα αντικαταβολής με επιπλέον χρέωση 1€.
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4. Pickup from the store:
Leof. El. Venizelou 73 (former Theseos), Kallithea
Συμπληρώστε τον ταχυδρομικό κωδικό για να λάβετε εκτίμηση τρόπου και κόστους μεταφορικών.
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The Transcend JetRam JM2666HSG-8G is an exceptional memory module designed for notebook and laptop upgrades. Featuring an impressive 8GB DDR4-2666 MHz CL19 configuration, it provides seamless integration into DDR4 systems.
This memory module boasts a 260-pin form factor and operates at a nominal voltage of 1.2V, ensuring efficient power consumption while maintaining performance. The single-rank (1Rx16) and 1Gx16 DRAM organization are tailored for optimal function.
Key Technical Specifications:
- Capacity: 8GB (1 x 8GB module).
- Type: DDR4 SO-DIMM, unbuffered, non-ECC.
- Speed: 2666 MHz (MT/s), with bandwidth up to 21 GB/s.
- Timings: CAS Latency (CL) 19.
- Voltage: 1.2V for up to 40% power savings compared to 1.5V DDR3.
With ETT-grade DRAM chips, this module is engineered for reliability, offering cooler operation and enhancing data-intensive tasks such as faster startups and overall responsiveness.
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Capacity8GB
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TypeDDR4 SO-DIMM, unbuffered, non-ECC
-
Speed2666 MHz
-
TimingsCAS Latency 19
-
Voltage1.2V
-
Pins260-pin
Ratings
Description
The Transcend JetRam JM2666HSG-8G is an exceptional memory module designed for notebook and laptop upgrades. Featuring an impressive 8GB DDR4-2666 MHz CL19 configuration, it provides seamless integration into DDR4 systems.
This memory module boasts a 260-pin form factor and operates at a nominal voltage of 1.2V, ensuring efficient power consumption while maintaining performance. The single-rank (1Rx16) and 1Gx16 DRAM organization are tailored for optimal function.
Key Technical Specifications:
- Capacity: 8GB (1 x 8GB module).
- Type: DDR4 SO-DIMM, unbuffered, non-ECC.
- Speed: 2666 MHz (MT/s), with bandwidth up to 21 GB/s.
- Timings: CAS Latency (CL) 19.
- Voltage: 1.2V for up to 40% power savings compared to 1.5V DDR3.
With ETT-grade DRAM chips, this module is engineered for reliability, offering cooler operation and enhancing data-intensive tasks such as faster startups and overall responsiveness.
Technical Specifications
-
Capacity8GB
-
TypeDDR4 SO-DIMM, unbuffered, non-ECC
-
Speed2666 MHz
-
TimingsCAS Latency 19
-
Voltage1.2V
-
Pins260-pin
