Μικροηλεκτρονικά Allnet BrickRknowledge Transistor p-MOS IRF4905

The ALLNET BrickRknowledge Transistor p-MOS IRF4905 is a high-performance P-channel MOSFET designed for various electronic applications. It operates in enhancement mode, making it ideal for applications where efficient and reliable current control is crucial.This transistor is housed in a TO-220AB...

Μικροηλεκτρονικά Allnet BrickRknowledge Transistor p-MOS IRF4905

Name: Μικροηλεκτρονικά Allnet BrickRknowledge Transistor p-MOS IRF4905
Brand: Allnet
SKU: 1173522797
Price: 39.55 EUR
Availability: OutOfStock

Product Code: 1173522797

Available in 4 - 10 days

39,55 €

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εως 36 δόσεις με πιστωτική κάρτα

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The ALLNET BrickRknowledge Transistor p-MOS IRF4905 is a high-performance P-channel MOSFET designed for various electronic applications. It operates in enhancement mode, making it ideal for applications where efficient and reliable current control is crucial.

This transistor is housed in a TO-220AB package, which facilitates seamless integration into electronic circuits.

Key Technical Specifications:

Type of Transistor: P-channel MOSFET
Maximum Drain-Source Voltage (Vds): -55 V
Maximum Drain Current (Id): -74 A at 25°C
Gate Threshold Voltage (Vgs(th)): -2 V to -4 V
Maximum Gate-Source Voltage Difference (Vgs): ±20 V
Maximum Power Dissipation: 200 W
Maximum Operating Temperature: 175°C
On-state Resistance: 0.02 Ω (Vgs = -10 V)
Package Type: TO-220AB
Mounting Type: Through Hole

Highlighted Features:

High Current Capability: Capable of handling significant drain currents.
Low On-Resistance: Ensures high efficiency during operation.
Thermal Stability: Stable operation over wide temperature ranges.
High Reliability: Specifically designed for high-reliability electronic circuit applications.

Overall, the IRF4905 stands out as an excellent choice for power supplies, motor control systems, audio equipment, and automotive systems.

Type of Transistor

P-channel MOSFET
Maximum Drain-Source Voltage (Vds)

-55 V
Maximum Drain Current (Id)

-74 A
Gate Threshold Voltage (Vgs(th))

-2 V to -4 V
Maximum Gate-Source Voltage Difference (Vgs)

±20 V
Maximum Power Dissipation

200 W
Maximum Operating Temperature

175°C
On-state Resistance

0.02 Ω
Package Type

TO-220AB
Mounting Type

Through Hole

Ratings

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Description

This transistor is housed in a TO-220AB package, which facilitates seamless integration into electronic circuits.

Key Technical Specifications:

Type of Transistor: P-channel MOSFET
Maximum Drain-Source Voltage (Vds): -55 V
Maximum Drain Current (Id): -74 A at 25°C
Gate Threshold Voltage (Vgs(th)): -2 V to -4 V
Maximum Gate-Source Voltage Difference (Vgs): ±20 V
Maximum Power Dissipation: 200 W
Maximum Operating Temperature: 175°C
On-state Resistance: 0.02 Ω (Vgs = -10 V)
Package Type: TO-220AB
Mounting Type: Through Hole

Highlighted Features:

High Current Capability: Capable of handling significant drain currents.
Low On-Resistance: Ensures high efficiency during operation.
Thermal Stability: Stable operation over wide temperature ranges.
High Reliability: Specifically designed for high-reliability electronic circuit applications.

Overall, the IRF4905 stands out as an excellent choice for power supplies, motor control systems, audio equipment, and automotive systems.

Technical Specifications

Type of Transistor

P-channel MOSFET
Maximum Drain-Source Voltage (Vds)

-55 V
Maximum Drain Current (Id)

-74 A
Gate Threshold Voltage (Vgs(th))

-2 V to -4 V
Maximum Gate-Source Voltage Difference (Vgs)

±20 V
Maximum Power Dissipation

200 W
Maximum Operating Temperature

175°C
On-state Resistance

0.02 Ω
Package Type

TO-220AB
Mounting Type

Through Hole

Μικροηλεκτρονικά Allnet BrickRknowledge Transistor p-MOS IRF4905

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