Simple and fast payment
Discount Coupons
Easy order tracking
Personalized shopping
Σκληρός Δίσκος SSD 2.5 1.9TB Samsung PM9A3 NVMe PCIe 4.0 x 4 bulk
εως 36 δόσεις με πιστωτική κάρτα
Need Help? Fill in your details so we can call you immediately!
4 installments 0% επιτόκιο, 20€ έως 300€
3 to 60 installments 300€ έως 100.00€
σε όλη την Ελλάδα
Related Products
Σκληρός Δίσκος M.2 SSD Western Digital Black SN8100 2TB PCI Express 5.0 NVMe TLC 3D NAND
Σκληρός Δίσκος M.2 SSD PNY CS1030 500GB PCI Express 3.0 NVMe 3D NAND
Σκληρός Δίσκος M.2 SSD PNY CS2241 512GB NVME PCI Express 4.0 3D NAND Bulk
Σκληρός Δίσκος M.2 SSD Silicon Power US75 1TB PCI Express 4.0 NVMe 3D NAND
Σκληρός Δίσκος M.2 SSD Western Digital Black SN8100 1TB PCI Express 5.0 NVMe TLC 3D NAND
Σκληρός Δίσκος M.2 SSD SSD Patriot Viper P410 PCI-Ex4 NVMe 1.4 1TB 5GB/s (P410P1TBM28H)
Σκληρός Δίσκος M.2 SSD Kioxia LSF10Z001TG8 1TB PCI Express 4.0 NVMe QLC
Σκληρός Δίσκος M.2 SSD Kioxia LSF10Z002TG8 2TB PCI Express 4.0 NVMe QLC
Σκληρός Δίσκος M.2 SSD Synology SNV5420-400G 400GB PCI Express 3.0 NVMe
Σκληρός Δίσκος M.2 SSD 512GB Innovation IT Performance NVMe PCIe 3.0 x 4 bulk (QLC)
Σκληρός Δίσκος M.2 SSD 1TB Innovation IT 1TB PerformanceQ NVMe PCIe 3.0 x 4 bulk
The Samsung PM9A3 NVMe PCIe SSD is a state-of-the-art storage solution tailored for enterprise data centers. Thanks to the latest advancements in technology, this SSD provides unmatched performance and reliability.
One of the standout features of the PM9A3 is its support for the PCIe Gen 4 x4 interface. With this interface, the SSD offers:
- Sequential Read speeds of up to 6,800 MB/s
- Sequential Write speeds of up to 4,000 MB/s
- Random Read IOPS (4K) reaching 1,000,000
- Random Write IOPS (4K) up to 180,000
Moreover, data integrity and security are paramount with features such as:
- 256-bit AES-XTS encryption
- Secure Boot to defend against firmware attacks
- Power Loss Protection to safeguard data during unexpected outages
Operating efficiently within a temperature range of 0 to 70°C ensures optimal performance without compromise. The PM9A3 is engineered for high-write environments, supporting up to 1 DWPD over 5 years.
With high MTBF rates and robust power management, the Samsung PM9A3 NVMe PCIe SSD is the optimal choice for demanding enterprise applications.
-
Capacity1.92 TB
-
Form Factor2.5-inch
-
InterfacePCIe Gen 4 x4
-
Sequential ReadUp to 6800 MB/s
-
Sequential WriteUp to 4000 MB/s
-
Random Read (4K)Up to 1000000 IOPS
-
Random Write (4K)Up to 180000 IOPS
-
Power Consumption - Read? 11 W
-
Power Consumption - Write? 13.5 W
-
Power Consumption - Idle? 4 W
-
Encryption256-bit AES-XTS
-
Secure BootRSA 3072 digital signature verification
-
Out-of-Band Drive ManagementNVMe Basic Management Command over SMBus
-
Power Loss ProtectionStandby command to prevent data loss
-
NAND Flash MemorySamsung V6 (128-layer) V-NAND TLC
-
Operating Temperature0 - 70 °C
-
MTBFHigh
-
Write Endurance1 DWPD for 5 years
Ratings
Description
The Samsung PM9A3 NVMe PCIe SSD is a state-of-the-art storage solution tailored for enterprise data centers. Thanks to the latest advancements in technology, this SSD provides unmatched performance and reliability.
One of the standout features of the PM9A3 is its support for the PCIe Gen 4 x4 interface. With this interface, the SSD offers:
- Sequential Read speeds of up to 6,800 MB/s
- Sequential Write speeds of up to 4,000 MB/s
- Random Read IOPS (4K) reaching 1,000,000
- Random Write IOPS (4K) up to 180,000
Moreover, data integrity and security are paramount with features such as:
- 256-bit AES-XTS encryption
- Secure Boot to defend against firmware attacks
- Power Loss Protection to safeguard data during unexpected outages
Operating efficiently within a temperature range of 0 to 70°C ensures optimal performance without compromise. The PM9A3 is engineered for high-write environments, supporting up to 1 DWPD over 5 years.
With high MTBF rates and robust power management, the Samsung PM9A3 NVMe PCIe SSD is the optimal choice for demanding enterprise applications.
Technical Specifications
-
Capacity1.92 TB
-
Form Factor2.5-inch
-
InterfacePCIe Gen 4 x4
-
Sequential ReadUp to 6800 MB/s
-
Sequential WriteUp to 4000 MB/s
-
Random Read (4K)Up to 1000000 IOPS
-
Random Write (4K)Up to 180000 IOPS
-
Power Consumption - Read? 11 W
-
Power Consumption - Write? 13.5 W
-
Power Consumption - Idle? 4 W
-
Encryption256-bit AES-XTS
-
Secure BootRSA 3072 digital signature verification
-
Out-of-Band Drive ManagementNVMe Basic Management Command over SMBus
-
Power Loss ProtectionStandby command to prevent data loss
-
NAND Flash MemorySamsung V6 (128-layer) V-NAND TLC
-
Operating Temperature0 - 70 °C
-
MTBFHigh
-
Write Endurance1 DWPD for 5 years
