Σκληρός Δίσκος SSD 2.5 1.9TB Samsung PM9A3 NVMe PCIe 4.0 x 4 bulk
| Installment plan | Amount / month |
|---|---|
| 2 | 224,17 € |
| 4 | 112,68 € |
| 6 | 75,52 € |
| 8 | 56,94 € |
| 10 | 45,79 € |
| 12 | 38,36 € |
| 18 | 25,98 € |
| 24 | 19,79 € |
| 36 | 13,61 € |
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Pickup from the store:El. Ave. Venizelou 73 (formerly Theseos), Kallithea
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Pick up from a BoxNow machine:With BoxNow you can pick up your parcel from an Automatic Pickup Machine that is near you at all hours of the day 24/7. Possibility of cash on delivery with an additional fee of €1
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Shipping to your location (Calculate shipping):
Detailed Description
The Samsung PM9A3 NVMe PCIe SSD is a state-of-the-art storage solution tailored for enterprise data centers. Thanks to the latest advancements in technology, this SSD provides unmatched performance and reliability.
One of the standout features of the PM9A3 is its support for the PCIe Gen 4 x4 interface. With this interface, the SSD offers:
- Sequential Read speeds of up to 6,800 MB/s
- Sequential Write speeds of up to 4,000 MB/s
- Random Read IOPS (4K) reaching 1,000,000
- Random Write IOPS (4K) up to 180,000
Moreover, data integrity and security are paramount with features such as:
- 256-bit AES-XTS encryption
- Secure Boot to defend against firmware attacks
- Power Loss Protection to safeguard data during unexpected outages
Operating efficiently within a temperature range of 0 to 70°C ensures optimal performance without compromise. The PM9A3 is engineered for high-write environments, supporting up to 1 DWPD over 5 years.
With high MTBF rates and robust power management, the Samsung PM9A3 NVMe PCIe SSD is the optimal choice for demanding enterprise applications.
Specifications
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Capacity
- 1.92 TB
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Form Factor
- 2.5-inch
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Interface
- PCIe Gen 4 x4
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Sequential Read
- Up to 6800 MB/s
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Sequential Write
- Up to 4000 MB/s
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Random Read (4K)
- Up to 1000000 IOPS
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Random Write (4K)
- Up to 180000 IOPS
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Power Consumption - Read
- ? 11 W
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Power Consumption - Write
- ? 13.5 W
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Power Consumption - Idle
- ? 4 W
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Encryption
- 256-bit AES-XTS
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Secure Boot
- RSA 3072 digital signature verification
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Out-of-Band Drive Management
- NVMe Basic Management Command over SMBus
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Power Loss Protection
- Standby command to prevent data loss
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NAND Flash Memory
- Samsung V6 (128-layer) V-NAND TLC
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Operating Temperature
- 0 - 70 °C
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MTBF
- High
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Write Endurance
- 1 DWPD for 5 years
Άμεσα Διαθέσιμα
