Σκληρός Δίσκος m.2 SSD 2TB Samsung 990 Pro With Heatsink Pcie Nvme Tbw Mtbf Mz-V9P2T0Gw

The Samsung 990 PRO with Heatsink 2TB SSD is engineered for high-performance tasks, making it an ideal choice for both client PCs and PlayStation 5 systems. With its slim profile and integrated heatsink, it ensures efficient thermal management during demanding applications such as gaming. One of...

Σκληρός Δίσκος m.2 SSD 2TB Samsung 990 Pro With Heatsink Pcie Nvme Tbw Mtbf Mz-V9P2T0Gw

Name: Σκληρός Δίσκος m.2 SSD 2TB Samsung 990 Pro With Heatsink Pcie Nvme Tbw Mtbf Mz-V9P2T0Gw
Brand: Samsung
SKU: 1171617437
Price: 602.7 EUR
Availability: OutOfStock

Product Code: 1171617437

Available in 1 - 3 days

602,70 €

18,82€ / month

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The Samsung 990 PRO with Heatsink 2TB SSD is engineered for high-performance tasks, making it an ideal choice for both client PCs and PlayStation 5 systems. With its slim profile and integrated heatsink, it ensures efficient thermal management during demanding applications such as gaming.

One of the key highlights of this SSD is its impressive speed. The sequential read speeds reach up to 7,450 MB/s, while the sequential write speeds can hit 6,900 MB/s, which signifies a notable improvement in performance compared to previous models.

Key Technical Specifications

Interface: PCIe Gen 4.0 x4, NVMe 2.0
NAND Flash: Samsung V-NAND TLC
DRAM Cache: 2GB LPDDR4

Additionally, industries benefit from the high-endurance capability of the SSD, boasting a lifespan of 1,200 TBW and a reliability metric of MTBF 1.5 million hours.

Performance Metrics

Metric	Specification
Random Read (4KB, QD32)	Up to 1,400,000 IOPS
Random Write (4KB, QD32)	Up to 1,550,000 IOPS

The Samsung 990 PRO not only excels in speed but also manages power consumption efficiently, ensuring low energy usage and stable performance even in compact systems.

Interface

PCIe Gen 4.0 x4, NVMe 2.0
NAND Flash

Samsung V-NAND TLC
DRAM Cache

2GB LPDDR4
Sequential Read

Up to 7450 MB/s
Sequential Write

Up to 6900 MB/s
Random Read (4KB, QD32)

Up to 1400000 IOPS
Random Write (4KB, QD32)

Up to 1550000 IOPS
Endurance

1200 TBW
MTBF

1.5 million hours
Operating Temperature

070°C
Security Features

TCG/Opal 2.0, TRIM, Garbage Collection, S.M.A.R.T.

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Description

Key Technical Specifications

Interface: PCIe Gen 4.0 x4, NVMe 2.0
NAND Flash: Samsung V-NAND TLC
DRAM Cache: 2GB LPDDR4

Additionally, industries benefit from the high-endurance capability of the SSD, boasting a lifespan of 1,200 TBW and a reliability metric of MTBF 1.5 million hours.

Performance Metrics

Metric	Specification
Random Read (4KB, QD32)	Up to 1,400,000 IOPS
Random Write (4KB, QD32)	Up to 1,550,000 IOPS

The Samsung 990 PRO not only excels in speed but also manages power consumption efficiently, ensuring low energy usage and stable performance even in compact systems.

Technical Specifications

Interface

PCIe Gen 4.0 x4, NVMe 2.0
NAND Flash

Samsung V-NAND TLC
DRAM Cache

2GB LPDDR4
Sequential Read

Up to 7450 MB/s
Sequential Write

Up to 6900 MB/s
Random Read (4KB, QD32)

Up to 1400000 IOPS
Random Write (4KB, QD32)

Up to 1550000 IOPS
Endurance

1200 TBW
MTBF

1.5 million hours
Operating Temperature

070°C
Security Features

TCG/Opal 2.0, TRIM, Garbage Collection, S.M.A.R.T.

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