Σκληρός Δίσκος m.2 SSD 2TB Kioxia Exceria G3 (2280) PCIe 5.0 x4 NVMe

The Kioxia SSD 2TB Exceria G3 M.2 (2280) PCIe 5.0 x4 NVMe is designed to meet the demands of modern computing. This entry-level consumer SSD provides exceptional performance, ideal for desktops, laptops, and gaming setups.Key Features:Capacity: 2TB (2000 GB)Form Factor: M.2 2280Interface: PCI...

Σκληρός Δίσκος m.2 SSD 2TB Kioxia Exceria G3 (2280) PCIe 5.0 x4 NVMe

Name: Σκληρός Δίσκος m.2 SSD 2TB Kioxia Exceria G3 (2280) PCIe 5.0 x4 NVMe
Brand: Kioxia
SKU: 1117616493
Price: 337.39 EUR
Availability: OutOfStock

Product Code: 1117616493

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The Kioxia SSD 2TB Exceria G3 M.2 (2280) PCIe 5.0 x4 NVMe is designed to meet the demands of modern computing. This entry-level consumer SSD provides exceptional performance, ideal for desktops, laptops, and gaming setups.

Key Features:

Capacity: 2TB (2000 GB)
Form Factor: M.2 2280
Interface: PCI Express® Gen5 x4
Interface Protocol: NVMe™ 2.0c
Flash Memory: BiCS FLASH™ QLC NAND

With maximum sequential read speeds of up to 10,000 MB/s and write speeds of 9,600 MB/s, it ensures rapid data transfers. Furthermore, it boasts impressive IOPS performance, enhancing responsiveness during high-demand tasks.

Performance Metrics:

Max Sequential Read: 10,000 MB/s
Max Sequential Write: 9,600 MB/s
Max Random Read: 1,600,000 IOPS
Max Random Write: 1,450,000 IOPS

Additionally, it features high endurance and efficient power consumption. Experience seamless usability with technologies such as TRIM and wear leveling.

Capacity

2000 GB
Form Factor

M.2 2280
Interface

PCI Express® Gen5 x4
Interface Protocol

NVMe™ 2.0c
Flash Memory

BiCS FLASH™ QLC NAND
Max Sequential Read

10,000 MB/s
Max Sequential Write

9,600 MB/s
Max Random Read

1,600,000 IOPS
Max Random Write

1,450,000 IOPS
Endurance

1,200 TBW
Power Consumption (Active)

6.4W
Supply Voltage

3.3V ±5%

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Description

Key Features:

Capacity: 2TB (2000 GB)
Form Factor: M.2 2280
Interface: PCI Express® Gen5 x4
Interface Protocol: NVMe™ 2.0c
Flash Memory: BiCS FLASH™ QLC NAND

Performance Metrics:

Max Sequential Read: 10,000 MB/s
Max Sequential Write: 9,600 MB/s
Max Random Read: 1,600,000 IOPS
Max Random Write: 1,450,000 IOPS

Additionally, it features high endurance and efficient power consumption. Experience seamless usability with technologies such as TRIM and wear leveling.

Technical Specifications

Capacity

2000 GB
Form Factor

M.2 2280
Interface

PCI Express® Gen5 x4
Interface Protocol

NVMe™ 2.0c
Flash Memory

BiCS FLASH™ QLC NAND
Max Sequential Read

10,000 MB/s
Max Sequential Write

9,600 MB/s
Max Random Read

1,600,000 IOPS
Max Random Write

1,450,000 IOPS
Endurance

1,200 TBW
Power Consumption (Active)

6.4W
Supply Voltage

3.3V ±5%

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