Sku: 1173523070

Σκληρός Δίσκος M.2 SSD 1TB Innovation IT Performance NVMe PCIe 3.0 x 4 retail

151,85 €
TBI Bank
Up to 36 instalments by credit card x 4,74€ / month 
Product Availability
call us
Need help?

Συμπλήρωσε τα στοιχεία σου για να σε καλέσουμε άμεσα.

Call us now!
Shop now
Methods of Pickup/Shipment
  • Pickup from the store:
    El. Ave. Venizelou 73 (formerly Theseos), Kallithea
  • Pick up from a BoxNow machine:
    With BoxNow you can pick up your parcel from an Automatic Pickup Machine that is near you at all hours of the day 24/7. Possibility of cash on delivery with an additional fee of €1
  • Shipping to your location (Calculate shipping):

Detailed Description

The M.2 1TB Innovation IT Performance NVMe PCIe 3.0 x 4 is a high-performance solid-state drive (SSD) tailored for demanding applications such as gaming, video editing, and data-intensive tasks. Its compact M.2 form factor makes it fit perfectly into the M.2 2280 slot, measuring 80mm in length and 22mm in width.

Key Technical Specifications:

  • Capacity: 1024 GB (1 TB)
  • Interface: NVMe PCIe Gen3.0 x4
  • Controller: Silicon Motion SM2263XT
  • NAND: 3D TLC (Triple-Level Cell) NAND flash memory
  • DRAM Cache: None
  • Sequential Read/Write Speeds: Up to 2132 MB/s read and 1600 MB/s write
  • 4K Random Read/Write IOPS: Up to 210K IOPS read and 250K IOPS write
  • Total Bytes Written (TBW): 332 TBW

Performance Features: The latest NVMe protocol drastically enhances computing performance, maximizing efficiency for high-speed data processing applications.

Additional Features:

  • SLC Caching for improved access times
  • Smart Management with garbage collection and TRIM commands
  • 5-year limited warranty for user reassurance

In conclusion, the M.2 1TB Innovation IT Performance NVMe PCIe 3.0 x 4 represents an excellent upgrade for modern computing needs.

Specifications

  • Capacity
    • 1024 GB (1 TB)
  • Interface
    • NVMe PCIe Gen3.0 x4
  • Controller
    • Silicon Motion SM2263XT
  • NAND
    • 3D TLC NAND flash memory
  • DRAM Cache
    • None
  • Sequential Read Speed
    • Up to 2132 MB/s
  • Sequential Write Speed
    • Up to 1600 MB/s
  • 4K Random Read IOPS
    • Up to 210K IOPS
  • 4K Random Write IOPS
    • Up to 250K IOPS
  • Total Bytes Written
    • 332 TBW
  • Dimensions
    • 80 x 22 x 3.15 mm
  • Weight
    • 0.038 kg
  • Operating Temperature
    • 0°C to 70°C
  • Storage Temperature
    • -40°C to 85°C
  • MTBF
    • 1,000,000 hours

Άμεσα Διαθέσιμα