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Full details
model designation
F4-2400C16D-8GRS
series
Ripjaws
capacity
8 GB (2 x 4096 MB)
modules
number
2 pieces
placement
bilaterally
Shape
SO-DIMM
Type
SDRAM DDR4
connection
260-Pin
tension
1.2 volts
default
DDR4-2400...
More
Μνήμη RAM Φορητού DDR4 8GB G.Skill 2400 CL16 Ripjaws K2
Product Code: 2115013963
Available in 1 - 3 days
85,93 €
or
2,68€ / month
εως 36 δόσεις με πιστωτική κάρτα
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Έως 36 Δόσεις. Δείτε το πλάνο δόσεων:
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4 installments 0% επιτόκιο, 20€ έως 300€
3 to 60 installments 300€ έως 100.00€
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Full details
| model designation | F4-2400C16D-8GRS | ||
| series | Ripjaws | ||
| capacity | 8 GB (2 x 4096 MB) | ||
| modules | number | 2 pieces | |
| placement | bilaterally | ||
| Shape | SO-DIMM | ||
| Type | SDRAM DDR4 | ||
| connection | 260-Pin | ||
| tension | 1.2 volts | ||
| default | DDR4-2400 (PC4-19200) | ||
| timings | CAS Latency (CL) | 16 | |
| RAS-to-CAS Delay (tRCD) | 16 | ||
| RAS precharge time (tRP) | 16 | ||
| Row Active Time (tRAS) | 39 | ||
| Further information | DDR4 is the evolution of DDR3 and offers over its predecessor, a number of new features and special features such as up to 40% lower energy consumption, higher speeds, higher data density (allows memory modules with a capacity of up to 128GB, the future to 512 GB) and improved stability in operation through advanced error correction techniques such as CRC (Cyclic Redundancy check), CMD / ADD (on-chip parity detection) and "Per DRAM address Ability". | ||
Ratings
Description
Full details
| model designation | F4-2400C16D-8GRS | ||
| series | Ripjaws | ||
| capacity | 8 GB (2 x 4096 MB) | ||
| modules | number | 2 pieces | |
| placement | bilaterally | ||
| Shape | SO-DIMM | ||
| Type | SDRAM DDR4 | ||
| connection | 260-Pin | ||
| tension | 1.2 volts | ||
| default | DDR4-2400 (PC4-19200) | ||
| timings | CAS Latency (CL) | 16 | |
| RAS-to-CAS Delay (tRCD) | 16 | ||
| RAS precharge time (tRP) | 16 | ||
| Row Active Time (tRAS) | 39 | ||
| Further information | DDR4 is the evolution of DDR3 and offers over its predecessor, a number of new features and special features such as up to 40% lower energy consumption, higher speeds, higher data density (allows memory modules with a capacity of up to 128GB, the future to 512 GB) and improved stability in operation through advanced error correction techniques such as CRC (Cyclic Redundancy check), CMD / ADD (on-chip parity detection) and "Per DRAM address Ability". | ||
