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Full details
model designation
F4-2133C15D-8GIS
series
Aegis
capacity
8 GB (2 x 4096 MB)
modules
number
2 pieces
Shape
DIMM
Type
SDRAM DDR4
connection
288-Pin
tension
1.2 volts
default
DDR4-2133 (PC4-17000)
timings
CAS Latency (CL)
15
RAS-to-CAS Delay (tRCD)
15
RAS...
More
Μνήμη RAM Σταθερού DDR4 8GB G.Skill CL15 2133 Aegis K2
Product Code: 2115015843
Available in 1 - 3 days
142,58 €
or
4,45€ / month
εως 36 δόσεις με πιστωτική κάρτα
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4 installments 0% επιτόκιο, 20€ έως 300€
3 to 60 installments 300€ έως 100.00€
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Full details
| model designation | F4-2133C15D-8GIS | ||
| series | Aegis | ||
| capacity | 8 GB (2 x 4096 MB) | ||
| modules | number | 2 pieces | |
| Shape | DIMM | ||
| Type | SDRAM DDR4 | ||
| connection | 288-Pin | ||
| tension | 1.2 volts | ||
| default | DDR4-2133 (PC4-17000) | ||
| timings | CAS Latency (CL) | 15 | |
| RAS-to-CAS Delay (tRCD) | 15 | ||
| RAS precharge time (tRP) | 15 | ||
| Row Active Time (tRAS) | 35 | ||
| Further information | DDR4 is the evolution of DDR3 and offers over its predecessor, a number of new features and special features such as up to 40% lower energy consumption, higher speeds, higher data density (allows memory modules with a capacity of up to 128GB, the future to 512 GB) and improved stability in operation through advanced error correction techniques such as CRC (Cyclic Redundancy check), CMD / ADD (on-chip parity detection) and "Per DRAM address Ability". | ||
Ratings
Description
Full details
| model designation | F4-2133C15D-8GIS | ||
| series | Aegis | ||
| capacity | 8 GB (2 x 4096 MB) | ||
| modules | number | 2 pieces | |
| Shape | DIMM | ||
| Type | SDRAM DDR4 | ||
| connection | 288-Pin | ||
| tension | 1.2 volts | ||
| default | DDR4-2133 (PC4-17000) | ||
| timings | CAS Latency (CL) | 15 | |
| RAS-to-CAS Delay (tRCD) | 15 | ||
| RAS precharge time (tRP) | 15 | ||
| Row Active Time (tRAS) | 35 | ||
| Further information | DDR4 is the evolution of DDR3 and offers over its predecessor, a number of new features and special features such as up to 40% lower energy consumption, higher speeds, higher data density (allows memory modules with a capacity of up to 128GB, the future to 512 GB) and improved stability in operation through advanced error correction techniques such as CRC (Cyclic Redundancy check), CMD / ADD (on-chip parity detection) and "Per DRAM address Ability". | ||
