Σκληρός Δίσκος M.2 SSD 1TB Innovation IT 1TB PerformanceQ NVMe PCIe 3.0 x 4 bulk
εως 36 δόσεις με πιστωτική κάρτα
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4 installments 0% επιτόκιο, 20€ έως 300€
3 to 60 installments 300€ έως 100.00€
The Innovation IT M.2 1TB PerformanceQ NVMe PCIe 3.0 x4 bulk is an exceptional internal solid-state drive (SSD) tailored for users seeking high-speed data transfer and efficient storage solutions. This compact form factor is not only powerful but also versatile for various computing needs.
Key Features:
- Form Factor: M.2 2280 (80mm long, 22mm wide, with a typical thickness of ~2-3mm)
- Interface: PCIe 3.0 x4 with NVMe protocol for enhanced speed and performance.
- Memory Capacity: 1 TB (approximately 954 GiB usable)
- NAND Type: TLC (Triple-Level Cell) NAND flash memory
- Sequential Read/Write Speeds: Up to 3400 MB/s and 3000 MB/s respectively
- Power Consumption: Low, approximately 3.3V with idle power ≤45 mW
This SSD is crafted for demanding applications such as gaming and video editing. Its performance capabilities make it an excellent choice for resource-intensive tasks.
Reliability: With an MTBF of around 1.5 million hours, the Innovation IT SSD ensures durability and longevity in various computing environments.
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Form FactorM.2 2280
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InterfacePCIe 3.0 x4
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Memory Capacity1 TB
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NAND TypeTLC
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ControllerSilicon Motion SM2263XT
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Sequential Read SpeedUp to 3400 MB/s
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Sequential Write SpeedUp to 3000 MB/s
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Random Read/Write IOPS~500,000 IOPS
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Power Consumption3.3 V
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MTBF1.5 million hours
Ratings
Description
The Innovation IT M.2 1TB PerformanceQ NVMe PCIe 3.0 x4 bulk is an exceptional internal solid-state drive (SSD) tailored for users seeking high-speed data transfer and efficient storage solutions. This compact form factor is not only powerful but also versatile for various computing needs.
Key Features:
- Form Factor: M.2 2280 (80mm long, 22mm wide, with a typical thickness of ~2-3mm)
- Interface: PCIe 3.0 x4 with NVMe protocol for enhanced speed and performance.
- Memory Capacity: 1 TB (approximately 954 GiB usable)
- NAND Type: TLC (Triple-Level Cell) NAND flash memory
- Sequential Read/Write Speeds: Up to 3400 MB/s and 3000 MB/s respectively
- Power Consumption: Low, approximately 3.3V with idle power ≤45 mW
This SSD is crafted for demanding applications such as gaming and video editing. Its performance capabilities make it an excellent choice for resource-intensive tasks.
Reliability: With an MTBF of around 1.5 million hours, the Innovation IT SSD ensures durability and longevity in various computing environments.
Technical Specifications
-
Form FactorM.2 2280
-
InterfacePCIe 3.0 x4
-
Memory Capacity1 TB
-
NAND TypeTLC
-
ControllerSilicon Motion SM2263XT
-
Sequential Read SpeedUp to 3400 MB/s
-
Sequential Write SpeedUp to 3000 MB/s
-
Random Read/Write IOPS~500,000 IOPS
-
Power Consumption3.3 V
-
MTBF1.5 million hours