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Model Designation
F4-2133C15D-8GNT
series
Value
capacity
8 GB (2 x 4096 MB)
Modules
Quantity
2 pieces
Equipping
bilaterally
Shape
DIMM
Type
SDRAM DDR4
connection
288-Pin
tension
1.2 volts
default
DDR4-2133 (PC4-17000)
Timings
CAS Latency (CL)
15
RAS-to-CAS Delay...
More
Μνήμη RAM Σταθερού DDR4 8GB G.Skill 2133 NT K2
Product Code: 2115010836
Available in 4 - 10 days
126,98 €
or
3,97€ / month
εως 36 δόσεις με πιστωτική κάρτα
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4 installments 0% επιτόκιο, 20€ έως 300€
3 to 60 installments 300€ έως 100.00€
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| Model Designation | F4-2133C15D-8GNT | ||
| series | Value | ||
| capacity | 8 GB (2 x 4096 MB) | ||
| Modules | Quantity | 2 pieces | |
| Equipping | bilaterally | ||
| Shape | DIMM | ||
| Type | SDRAM DDR4 | ||
| connection | 288-Pin | ||
| tension | 1.2 volts | ||
| default | DDR4-2133 (PC4-17000) | ||
| Timings | CAS Latency (CL) | 15 | |
| RAS-to-CAS Delay (tRCD) | 15 | ||
| RAS precharge Time (Trp) | 15 | ||
| Row Active Time (tRAS) | 35 | ||
| Further information | DDR4 is the evolution of DDR3 and offers over its predecessor a number of innovations and special features such as up to 40% lower energy consumption, higher speeds, higher data density (enables memory modules with a capacity of up to 128GB, the future to 512 GB) and improved stability during operation by advanced error correction techniques such as CRC (Cyclic Redundancy Check), CMD / ADD (On-chip parity detection) and "Per DRAM address Ability". | ||
Ratings
Description
| Model Designation | F4-2133C15D-8GNT | ||
| series | Value | ||
| capacity | 8 GB (2 x 4096 MB) | ||
| Modules | Quantity | 2 pieces | |
| Equipping | bilaterally | ||
| Shape | DIMM | ||
| Type | SDRAM DDR4 | ||
| connection | 288-Pin | ||
| tension | 1.2 volts | ||
| default | DDR4-2133 (PC4-17000) | ||
| Timings | CAS Latency (CL) | 15 | |
| RAS-to-CAS Delay (tRCD) | 15 | ||
| RAS precharge Time (Trp) | 15 | ||
| Row Active Time (tRAS) | 35 | ||
| Further information | DDR4 is the evolution of DDR3 and offers over its predecessor a number of innovations and special features such as up to 40% lower energy consumption, higher speeds, higher data density (enables memory modules with a capacity of up to 128GB, the future to 512 GB) and improved stability during operation by advanced error correction techniques such as CRC (Cyclic Redundancy Check), CMD / ADD (On-chip parity detection) and "Per DRAM address Ability". | ||
